InGaAs光电二极管xsj - 10 - d5 - 70

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该8Gbps光电二极管芯片为InGaAs/InP PIN台面结构，顶照有源面积Φ70μm。该特征是低暗电流(典型。: 0.3nA @-5V)，低电容(典型值。: 0.25pF)，高响应(典型1310nm:1.02A/W，典型1550nm:1.1A/W)和卓越的可靠性。适用于8Gbps及以下数据速率光接收模块、千兆以太网、ATM等领域。特点:Φ70μm活动区域。●高反应性。●暗电流低。●台面结构。●数据速率高达8Gbps及以下。●顶部阳极和阴极设计。 ● Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE. ● 100% testing and inspection. Applications ● 8Gbps and below data rate digital receiver. ● SR/LR optical network. ● Gigabit Ethernet. ● 4G Fiber Channel. ● SONET/SDH OC-48. ● ATM (Asynchronous Transfer Mode).